Thermally stimulated current study of electron-irradiated semi-insulating Fe-doped InP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference28 articles.
1. Perspectives on III–V compound MIS structures
2. Gallium Arsenide and Related Compounds;Grote,1986
3. Native defects in gallium arsenide
4. Frenkel pairs in low-temperature electron-irradiated InP: X-ray diffraction
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1. Low temperature formation of highly resistive ZnO films using nonequilibrium N2/O2 plasma generated near atmospheric pressure;Thin Solid Films;2016-10
2. Thermally stimulated current study of electron-irradiation induced defects in semi-insulating InP obtained by multiple-step wafer annealing;Solid State Communications;2003-05
3. Evidence of shallow positron traps in ion-implanted InP observed by maximum entropy reconstruction of positron lifetime distribution: a test of MELT;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-02
4. Vacancies and negative ions in as-grown and ion-bombarded p-InP(Zn) observed by positron annihilation;Semiconductor Science and Technology;1999-01-01
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