Bi-induced acceptor level responsible for partial compensation of native free electron density in InP1−xBixdilute bismide alloys-Reference-Cited by-同舟云学术

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Bi-induced acceptor level responsible for partial compensation of native free electron density in InP1−xBixdilute bismide alloys

Published:2016-02-17 Issue:11 Volume:49 Page:115107
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Gelczuk Łukasz,Stokowski Hubert,Kopaczek Jan,Zhang Liyao,Li Yaoyao,Wang Kai,Wang Peng,Wang Shumin,Kudrawiec Robert

Funder

The Key Program of Natural Science Foundation of China

The Natural Science Foundation of China

The National Basic Research Program of China

The National Science Centre

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/49/i=11/a=115107/pdf

Reference45 articles.

1. Band gap of GaAs1−xBix, 0

2. Giant Spin-Orbit Bowing inGaAs1−xBix

3. Valence band anticrossing in GaBixAs1−x

4. Similar and dissimilar aspects ofIII−Vsemiconductors containingBiversusN

5. Comparison of the dilute bismide and nitride alloys GaAsBi and GaAsN

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1. Effects of rapid thermal annealing on deep-level defects and optical properties of n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature;Materials Science in Semiconductor Processing;2024-01

2. Bi composition-dependent study of infrared photoluminescence efficiency in InPBi bandgap;J INFRARED MILLIM W;2023

3. First-principle study of the optoelectronic properties of GaxIn1-xBiyP1-y quaternary alloys lattice-matched to InP for telecommunication applications;CAN J PHYS;2023

4. First-principle study of the optoelectronic properties of Ga_xIn_1-xBi_yP_1-y quaternary alloys lattice-matched to InP for telecommunication applications;Canadian Journal of Physics;2023-09-01

5. Modified band alignment method to obtain hybrid functional accuracy from standard DFT: Application to defects in highly mismatched III-V:Bi alloys;Physical Review Materials;2021-12-03

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