Ab initiostudy of hydrogenation effects in amorphous silicon carbide
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.7393/fulltext
Reference25 articles.
1. The electronic and atomic structure of hydrogenated amorphous Si—C alloys
2. Evidence for graphitic‐type bonding in glow discharge hydrogenated amorphous silicon carbon alloys
3. Electron-diffraction study of chemical ordering in glow-dischargea-Si1−xCx:H
4. The effect of hydrogen dilution on the interatomic bonding of amorphous hydrogenated silicon: carbon
5. X-ray photoelectron spectroscopy (XPS) of hydrogenated amorphous silicon carbide (a-SixC1-x:H) prepared by the plasma CVD method
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1. Photoelectron yield spectroscopy and inverse photoemission spectroscopy evaluations of p-type amorphous silicon carbide films prepared using liquid materials;AIP Advances;2016-05
2. Origin of Chemical Order in a-SixCyHz: Density-Functional Tight-Binding Molecular Dynamics and Statistical Thermodynamics Calculations;The Journal of Physical Chemistry C;2016-02-01
3. The influence of hydrogen on the chemical, mechanical, optical/electronic, and electrical transport properties of amorphous hydrogenated boron carbide;Journal of Applied Physics;2015-07-21
4. Local network structure of a-SiC:H and its correlation with dielectric function;Journal of Applied Physics;2013-12-21
5. New Approaches to the Computer Simulation of Amorphous Alloys: A Review;Materials;2011-04-13
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