Spin injection into silicon in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer-Reference-Cited by-同舟云学术

Spin injection into silicon in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer

Published:2017-12-18 Issue:23 Volume:96 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Sato Shoichi,Nakane Ryosho,Hada Takato,Tanaka Masaaki

Funder

Japan Science and Technology Agency

Ministry of Education, Culture, Sports, Science and Technology

Research Institute of Electrical Communication, Tohoku University

Tohoku University

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.96.235204/fulltext

Reference39 articles.

1. A spin metal–oxide–semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain

2. Spin MOSFETs as a basis for spintronics

3. MOS-Based Spin Devices for Reconfigurable Logic

4. Magnetoresistance of a Spin Metal–Oxide–Semiconductor Field-Effect Transistor with Ferromagnetic MnAs Source and Drain Contacts

5. Room-temperature operation of Si spin MOSFET with high on/off spin signal ratio

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