Oblique roughness replication in strained SiGe/Si multilayers
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.12435/fulltext
Reference33 articles.
1. Very high mobility two‐dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy
2. Broadband (8–14 μm), normal incidence, pseudomorphic GexSi1−x/Si strained‐layer infrared photodetector operating between 20 and 77 K
3. Medium‐wavelength, normal‐incidence, p‐type Si/SiGe quantum well infrared photodetector with background limited performance up to 85 K
4. Effect of strained InGaAs step bunching on mobility and device performance in n-InGaP/InGaAs/GaAs pseudomorphic heterostructures grown by metalorganic vapor phase epitaxy
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1. Unique features of laterally aligned GeSi nanowires self-assembled on the vicinal Si (001) surface misoriented toward the [100] direction;Nanoscale;2015
2. Effects of the lateral ordering of self-assembled SiGe nanoislands grown on strained Si1 − x Ge x buffer layers;Semiconductors;2012-05
3. Influence of small miscuts on self-ordered growth of Ge nanoislands;Semiconductor Physics Quantum Electronics and Optoelectronics;2011-12-05
4. Distribution of germanium in Si1 − x Ge x (x < 0.1) layers grown on the Si(001) substrate as a function of layer thickness;Journal of Experimental and Theoretical Physics;2009-12
5. Probing surface and interface morphology with Grazing Incidence Small Angle X-Ray Scattering;Surface Science Reports;2009-08
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