Optical and electrical properties of vanadium and erbium in4H-SiC-Reference-Cited by-同舟云学术

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Optical and electrical properties of vanadium and erbium in4H-SiC

Published:2004-05-12 Issue:19 Volume:69 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Prezzi D.,Eberlein T. A. G.,Filhol J.-S.,Jones R.,Shaw M. J.,Briddon P. R.,Öberg S.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.69.193202/fulltext

Reference28 articles.

1. Photoluminescence quenching in Er-doped compounds

2. Intense erbium‐1.54‐μm photoluminescence from 2 to 525 K in ion‐implanted 4H, 6H, 15R, and 3C SiC

3. Electrical and optical properties of erbium-related centers in 6H silicon carbide

4. Erbium-related band gap states in 4H– and 6H–silicon carbide

5. Photoluminescence and DLTS Measurements of 15MeV Erbium Implanted 6H and 4H SiC

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