Erbium-related band gap states in 4H– and 6H–silicon carbide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1539539
Reference12 articles.
1. Resonant nonradiative energy transfer to erbium ions in amorphous hydrogenated silicon
2. Photoluminescence and DLTS Measurements of 15MeV Erbium Implanted 6H and 4H SiC
3. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
4. Radiotracer identification of a Ta-related deep level in 4H–SiC
5. Recoil implantation of radioactive transition metals and their investigation in silicon by deep‐level transient spectroscopy
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2. Infrared erbium photoluminescence enhancement in silicon carbide nano-pillars;Journal of Applied Physics;2021-10-14
3. Investigation of a Self-Aligned Cobalt Silicide Process for Ohmic Contacts to Silicon Carbide;Journal of Electronic Materials;2019-02-12
4. Microstructural and photoluminescent properties of terbium-doped SiC nanotubes prepared by sputtering using electrospun polymer templates;Journal of Luminescence;2015-01
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