Author:
Klettke O,Reshanov S.A,Pensl G,Shishkin Y,Devaty R.P,Choyke W.J
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference5 articles.
1. Intense erbium‐1.54‐μm photoluminescence from 2 to 525 K in ion‐implanted 4H, 6H, 15R, and 3C SiC
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3. Photoluminescence and DLTS Measurements of 15MeV Erbium Implanted 6H and 4H SiC
4. Properties of erbium luminescence in bulk crystals of silicon carbide
5. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy
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