Site selective studies of Er3+ emission centers in Er-implanted 6H-SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2397025
Reference17 articles.
1. Room‐temperature electroluminescence from Er‐doped crystalline Si
2. High efficiency light emitting devices in silicon
3. Optoelectronic Properties and Applications of Rare-Earth-Doped GaN
4. Voltage-controlled yellow or orange emission from GaN codoped with Er and Eu
5. Selective enhancement of 1540 nm Er3+ emission centers in Er-implanted GaN by Mg codoping
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1. Detecting the origin of luminescence in Er^3+-doped hexagonal Na_15Gd_15F_6 phosphors;Optics Letters;2016-11-11
2. Radiative recombination model of degenerate semiconductor and photoluminescence properties of 3C-SiC by P and N doping;Journal of Applied Physics;2012-08
3. Analysis of Erbium and Vanadium Diffusion in Porous Silicon Carbide;Advances in Condensed Matter Physics;2012
4. Synthesis, microstructure, and photoluminescence properties of thornlike SiC:Tb nanostructures;Journal of Materials Research;2010-06
5. Effect of V/III flux ratio on luminescence properties and defect formation of Er-doped GaN;Applied Physics Letters;2010-02
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