Segregation of H as a surfactant during the formation of an Ag cluster on H-terminated Si(111): First-principles total-energy calculations
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.73.125343/fulltext
Reference33 articles.
1. Hydrogen-mediated epitaxy of Ag on Si(111) as studied by low-energy ion scattering
2. Ge growth on Si using atomic hydrogen as a surfactant
3. Hydrogen interaction with clean and modified silicon surfaces
4. Direct Observation of the Growth Process of Ag Thin Film on a Hydrogen-Terminated Si(111) Surface
5. Effects of hydrogen impurities on the diffusion, nucleation, and growth of Si on Si(001)
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2. Effects of the deposition rate on growth modes of Ag islands on the hydrogen-terminated Si(111)-(1 × 1) surface: The role of surface energy and quantum size effect;Journal of Applied Physics;2017-09-05
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