Chemical ordering and pressure-induced isostructural and electronic transitions in MoSSe crystal-Reference-Cited by-同舟云学术

Chemical ordering and pressure-induced isostructural and electronic transitions in MoSSe crystal

Published:2020-07-13 Issue:1 Volume:102 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Bera Achintya^ORCID,Singh Anjali^ORCID,Sorb Y. A.,Jenjeti Ramesh Naidu^ORCID,Muthu D. V. S.,Sampath S.,Narayana Chandrabhas,Waghmare U. V.,Sood A. K.^ORCID

Funder

Department of Science and Technology, Ministry of Science and Technology

Jawaharlal Nehru Centre for Advanced Scientific Research

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.102.014103/fulltext

Reference56 articles.

1. Electroluminescence in Single Layer MoS2

2. Channel Length Scaling of MoS2MOSFETs

3. Polarity-Reversed Robust Carrier Mobility in Monolayer MoS2 Nanoribbons

4. Conducting MoS2 Nanosheets as Catalysts for Hydrogen Evolution Reaction

5. Single-Layer MoS2 Phototransistors

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