Spin-polarized tunneling as a probe of the electronic properties ofGa1−xMnxAsheterostructures-Reference-Cited by-同舟云学术

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Spin-polarized tunneling as a probe of the electronic properties ofGa1−xMnxAsheterostructures

Published:2007-10-11 Issue:14 Volume:76 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Elsen M.,Jaffrès H.,Mattana R.,Thevenard L.,Lemaitre A.,George J.-M.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.76.144415/fulltext

Reference33 articles.

1. Large Tunneling Magnetoresistance in GaMnAs/AlAs/GaMnAs Ferromagnetic Semiconductor Tunnel Junctions

2. Electrical Detection of Spin Accumulation in ap-Type GaAs Quantum Well

3. Very Large Tunneling Anisotropic Magnetoresistance of a(Ga,Mn)As/GaAs/(Ga,Mn)AsStack

4. Origin of the Tunnel Anisotropic Magnetoresistance inGa1−xMnxAs/ZnSe/Ga1−xMnxAsMagnetic Tunnel Junctions of II-VI/III-V Heterostructures

5. Coulomb Blockade Anisotropic Magnetoresistance Effect in a(Ga,Mn)AsSingle-Electron Transistor

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spin-Orbit Currents, Spin-Transfer Torque and Anomalous Tunneling in III–V Heterostructures Probed by Advanced 30- and 40-Bands ${k}\cdot{p}$ Tunneling Methods;IEEE Transactions on Magnetics;2019-07

2. Improved performance of a GaMnAs-based vertical spin electric double-layer transistor;Japanese Journal of Applied Physics;2018-07-25

3. Spin-orbit assisted chiral-tunneling at semiconductor tunnel junctions: study with advanced 30-band k • p methods;SPIE Proceedings;2016-10-03

4. III–V Based Magnetic Semiconductors;Handbook of Spintronics;2016

5. III–V Based Magnetic Semiconductors;Handbook of Spintronics;2015

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