Coulomb Blockade Anisotropic Magnetoresistance Effect in a(Ga,Mn)AsSingle-Electron Transistor-Reference-Cited by-同舟云学术

Coulomb Blockade Anisotropic Magnetoresistance Effect in a(Ga,Mn)AsSingle-Electron Transistor

Published:2006-08-15 Issue:7 Volume:97 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Wunderlich J.,Jungwirth T.,Kaestner B.,Irvine A. C.,Shick A. B.,Stone N.,Wang K.-Y.,Rana U.,Giddings A. D.,Foxon C. T.,Campion R. P.,Williams D. A.,Gallagher B. L.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.97.077201/fulltext

Reference21 articles.

1. Single-electron devices and their applications

2. Spintronics: A Spin-Based Electronics Vision for the Future

3. Enhanced Magnetic Valve Effect and Magneto-Coulomb Oscillations in Ferromagnetic Single Electron Transistor

4. Using Single Quantum States as Spin Filters to Study Spin Polarization in Ferromagnets

5. The Kondo Effect in the Presence of Ferromagnetism

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