Very Large Tunneling Anisotropic Magnetoresistance of a(Ga,Mn)As/GaAs/(Ga,Mn)AsStack-Reference-Cited by-同舟云学术

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Very Large Tunneling Anisotropic Magnetoresistance of a(Ga,Mn)As/GaAs/(Ga,Mn)AsStack

Published:2005-01-18 Issue:2 Volume:94 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Rüster C.,Gould C.,Jungwirth T.,Sinova J.,Schott G. M.,Giraud R.,Brunner K.,Schmidt G.,Molenkamp L. W.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.94.027203/fulltext

Reference8 articles.

1. Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions

2. Anisotropic tunneling magnetoresistance in GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor tunnel junctions

3. Tunneling magnetoresistance in (Ga,Mn)As-based heterostructures with a GaAs barrier

4. Tunneling Anisotropic Magnetoresistance: A Spin-Valve-Like Tunnel Magnetoresistance Using a Single Magnetic Layer

5. Magnetic switching and in‐plane uniaxial anisotropy in ultrathin Ag/Fe/Ag(100) epitaxial films

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