Hydrogen-related photoluminescent centers in SiC-Reference-Cited by-同舟云学术

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Hydrogen-related photoluminescent centers in SiC

Published:2004-11-12 Issue:20 Volume:70 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Prezzi D.,Eberlein T. A. G.,Jones R.,Hourahine B.,Briddon P. R.,Öberg S.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.70.205207/fulltext

Reference26 articles.

1. Anharmonicity of the C–H stretch mode in SiC: Unambiguous identification of hydrogen–silicon vacancy defect

2. Photoluminescence of H- and D-implanted4HSiC

3. Efficient Luminescence Centers in H- and D-Implanted6HSiC

4. Excitation properties of hydrogen-related photoluminescence in6H−SiC

5. CH and CD Bond-Stretching Modes in the Luminescence of H- and D-Implanted SiC

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of hydrogen implantation on emission from the silicon vacancy in 4H-SiC;Journal of Applied Physics;2020-02-24

2. Evidence for a hydrogen-related defect in implanted p-type 4H-SiC;New Journal of Physics;2008-07-08

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