Excitation properties of hydrogen-related photoluminescence in6H−SiC
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.62.7162/fulltext
Reference22 articles.
1. CH and CD Bond-Stretching Modes in the Luminescence of H- and D-Implanted SiC
2. Efficient Luminescence Centers in H- and D-Implanted6HSiC
3. Photoluminescence of H- and D-implanted4HSiC
4. Magneto-optical measurements on H-implanted6HSiC
5. Recombination-enhanced defect reactions strong new evidence for an old concept in semiconductors
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1. Investigations on the structural and optical properties of the swift heavy ion irradiated 6HSiC;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-05
2. Defects in SiC;Defects in Microelectronic Materials and Devices;2008-11-19
3. Laser-induced point-defect reaction in proton-irradiated SiC;Applied Physics B;2008-11-15
4. Recombination-induced athermal migration of hydrogen and deuterium in SiC;Journal of Applied Physics;2005-02
5. Grown-in and Radiation-induced Defects in 4H-SiC;MRS Proceedings;2005
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