RHEED intensity oscillations observed during the growth ofCaF2on Si(111)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.12443/fulltext
Reference24 articles.
1. An epitaxial Si/insulator/Si structure prepared by vacuum deposition of CaF2 and silicon
2. Electron diffraction observation of epitaxial silicon grown on a CaF2/Si(100) structure
3. Epitaxial growth and characterization of CaF2on Si
4. Growth and characterization of epitaxial silicon on heteroepitaxial CaF2/Si(111) structures
5. Structure of the Si(111)/CaF2 interface
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1. Analysis of the oscillation intensity of RHEED specular reflection during the MBE growth of CaF2/Si/CaF2 structures;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2016-09
2. Novel ALD Process for Depositing CaF2 Thin Films;Chemistry of Materials;2007-05-27
3. Atomic structure of CaF2/MnF2–Si(1 1 1) superlattices from X-ray diffraction;Applied Surface Science;2007-02
4. Kinematical calculations of RHEED intensity oscillations during the growth of thin epitaxial films;Computer Physics Communications;2005-08
5. Dynamical calculations for RHEED intensity oscillations;Computer Physics Communications;2005-03
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