Growth and characterization of epitaxial silicon on heteroepitaxial CaF2/Si(111) structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342088
Reference42 articles.
1. Silicon/insulator heteroepitaxial structures formed by vacuum deposition of CaF2 and Si
2. An epitaxial Si/insulator/Si structure prepared by vacuum deposition of CaF2 and silicon
3. Epitaxial growth of elemental semiconductor films onto silicide/Si and fluoride/Si structures
4. Epitaxial growth of Si films on CaF2/Si structures with thin Si layers predeposited at room temperature
5. Electron diffraction observation of epitaxial silicon grown on a CaF2/Si(100) structure
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1. In situ molecular beam epitaxial growth of SiN films using a source port compatible electron-gun for silicon evaporation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008
2. Electronic structure and optical properties of CaF2 films under low energy Ba+ ion-implantation combined with annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-05
3. RHEED intensity oscillations observed during the growth ofCaF2on Si(111);Physical Review B;1998-05-15
4. An epitaxial superlattice barrier;Solid-State Electronics;1996-01
5. Epitaxial Growth of $\bf CaF_{2}/Si/CaF_{2}$ on Si(111);Japanese Journal of Applied Physics;1994-04-01
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