Effect of the type-I to type-II transition on the binding energy of shallow donors in GaAs/AlAs quantum wells-Reference-Cited by-同舟云学术

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Effect of the type-I to type-II transition on the binding energy of shallow donors in GaAs/AlAs quantum wells

Published:1997-06-15 Issue:23 Volume:55 Page:15420-15422
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

da Cunha Lima A. T.,da Cunha Lima I. C.,Ferreira da Silva A.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.55.15420/fulltext

Reference14 articles.

1. Tunneling through highly transparent symmetric double barriers

2. Effects of Γ-Xmixing on the binding energy of a shallow donor in an AlAs/GaAs quantum well

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electric field effect on the donor levels bound to the X -valleys in AlAs/GaAs quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2015-11

2. Electron-phonon interaction in CdTe/CdMnTe/CdMgTe quantum wells;Semiconductor Science and Technology;1999-08-19

3. Analysis of the scattering of electrons by special vibrational modes in a GaAs quantum well with a thin AlAs middle barrier: Mobility modulated by a transversal electric field;Journal of Applied Physics;1999-05

4. Donor level in a quasi-two dimensional heterojunction system;Solid State Communications;1998-12

5. Binding energies of ground and excited donor states bound toXvalleys in GaAs/AlAs type-II quantum wells;Physical Review B;1998-09-15

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