Effects of Γ-Xmixing on the binding energy of a shallow donor in an AlAs/GaAs quantum well
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.7304/fulltext
Reference27 articles.
1. Effects of the layer thickness on the electronic character in GaAs‐AlAs superlattices
2. Γ-Xmixing in the miniband structure of a GaAs/AlAs superlattice
3. Indirect-direct anticrossing in GaAs-AlAs superlattices induced by an electric field: Evidence of Γ-X mixing
4. Short-period GaAs-AlAs superlattices: Optical properties and electronic structure
5. Valley-mixing effects in short-period superlattices
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1. 1s-like state binding energy of a donor impurity bound to Xz valleys of GaAs/AlAs type II quantum dots with an uniform applied magnetic field;Journal of Physics: Conference Series;2014-04-01
2. Binding energy and radiative lifetime of an exciton in a type-II quantum well;Physica Scripta;2011-12-08
3. Pressure study on the semiconductor-metal transition in a quantum well;physica status solidi (b);2009-06
4. Impurity-related polarizability and photoionization-cross section in double quantum wells under electric fields and hydrostatic pressure;Superlattices and Microstructures;2009-06
5. Hydrostatic-pressure-induced Γ-X mixing in delta-doped AlxGa1-xAs;Journal of Physics: Conference Series;2009-05-01
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