Model and results for a deep level with two different configurations inHg0.3Cd0.7Te
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.7805/fulltext
Reference11 articles.
1. MFecenter: A configurationally bistable defect in InP: Fe
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3. Observation of a multiply charged defect in p-type CdTe
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5. Deformation induced deep levels inp‐CdTe
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1. An Experimental Study of AlGaAs/GaAs Heterostructures Using an Advanced Transient Charge Processor;physica status solidi (a);2001-12
2. Capacitance transient spectroscopy models of coupled trapping kinetics among multiple defect states: Application to the study of trapping kinetics of defects in heavy-ion-damaged silicon;Physical Review B;2000-07-15
3. Mechanism of donor–acceptor pair recombination in Mg-doped GaN epilayers grown on sapphire substrates;Journal of Applied Physics;1998-08-15
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