Strain-dependent optical emission inIn1−xGaxAs/InPquantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.64.153301/fulltext
Reference14 articles.
1. Electronic energy levels inInxGa1−xAs/InP strained-layer superlattices
2. Type-I to type-II superlattice transition in strained layers ofInxGa1−xAs grown on InP
3. Excitonic transitions in strained-layerInxGa1−xAs/InP quantum wells
4. Spin-orbit-coupling effects on the valence-band structure of strained semiconductor quantum wells
5. Conduction-band and valence-band structures in strainedIn1−xGaxAs/InP quantum wells on (001) InP substrates
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1. The electron-longitudinal optical phonon scattering rate in GaInAsP/InP stepped quantum well;International Journal of Modern Physics B;2016-10-12
2. Temperature dependence of photoluminescence from Γ–Γ and Γ–Xminibands in lattice matched InGaAs/InP superlattices;Journal of Physics D: Applied Physics;2015-10-07
3. External electric field effect on exciton binding energy in InGaAsP/InP quantum wells;Acta Physica Sinica;2013
4. A photo-stimulated spectroscopic method for spatially resolved stress analysis in hetero-epitaxial films;Journal of Physics D: Applied Physics;2008-12-12
5. Type-I optical emissions in Ge∕Si quantum dots;Applied Physics Letters;2007-07-30
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