Electronic structure ofGa1−xCrxNand Si-doping effects studied by photoemission and x-ray absorption spectroscopy-Reference-Cited by-同舟云学术

Electronic structure ofGa1−xCrxNand Si-doping effects studied by photoemission and x-ray absorption spectroscopy

Published:2008-07-17 Issue:3 Volume:78 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Song G. S.,Kobayashi M.,Hwang J. I.,Kataoka T.,Takizawa M.,Fujimori A.,Ohkouchi T.,Takeda Y.,Okane T.,Saitoh Y.,Yamagami H.,Chang F.-H.,Lee L.,Lin H.-J.,Huang D. J.,Chen C. T.,Kimura S.,Funakoshi M.,Hasegawa S.,Asahi H.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.78.033304/fulltext

Reference24 articles.

1. Material Design of GaN-Based Ferromagnetic Diluted Magnetic Semiconductors

2. MBE growth and properties of GaCrN

3. Growth and characterization of Ga 1− x Cr x N with high Cr content grown on ZnO templates

4. Local structural change in GaCrN grown by radio frequency plasma-assisted molecular-beam epitaxy

5. Electronic structure of Ga1−xCrxN investigated by photoemission spectroscopy

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