Growth and characterization of Ga 1− x Cr x N with high Cr content grown on ZnO templates-Reference-Cited by-同舟云学术

Growth and characterization of Ga 1− x Cr x N with high Cr content grown on ZnO templates

Author:

Kim J. J.¹,Makino H.¹,Chen P. P.¹,Suzuki T.¹,Oh D. C.¹,Ko H. J.²,Chang J. H.³,Hanada T.¹,Yao T.¹⁴

Affiliation:

1. Institute for Materials Research, Tohoku University, 2‐1‐1 Katahira, Aoba‐ku, Sendai 980‐8577, Japan

2. Division of Technology, Korea Photonics Technology Institute, Bonchon‐dong 459‐3, Buk‐gu, Gwangju 500‐210, Korea

3. Department of Semiconductor Physics, Korea Maritime University, 1 Dongsam‐dong Yeongdo‐ku, Busan 606‐791, Korea

4. Center for Interdisciplinary Research, Tohoku University, Aramaki‐Aza‐Aoba, Aoba‐ku, Sendai 980‐8578, Japan

Publisher

Wiley

Link

Reference15 articles.

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. HAXPES Applications to Advanced Materials;Springer Series in Surface Sciences;2015-12-27

5. High-resolution hard X-ray photoelectron spectroscopy: Application of valence band and core-level spectroscopy to materials science;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2005-07