Local structural change in GaCrN grown by radio frequency plasma-assisted molecular-beam epitaxy-Reference-Cited by-同舟云学术

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Local structural change in GaCrN grown by radio frequency plasma-assisted molecular-beam epitaxy

Published:2004-12 Issue:1-2 Volume:273 Page:149-155
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hashimoto M.,Tanaka H.,Emura S.,Kim M.S.,Honma T.,Umesaki N.,Zhou Y.K.,Hasegawa S.,Asahi H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. Diluted magnetic III-V semiconductors

2. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

3. Magneto-Optics;Ando,2000

4. Local structures of III-V diluted magnetic semiconductorsGa1−xMnxAsstudied using extended x-ray-absorption fine structure

5. III-V diluted magnetic semiconductor: Substitutional doping of Mn in InAs

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1. N-Doped Porous Graphitic Carbon Hybridized with CrN Nanocrystals: Electrocatalysis-Induced Li₂S Three-Dimensional Growth and Enhanced Cathode Kinetics;ACS Applied Energy Materials;2023-10-31

2. III-Nitride Dilute Magnetic Semiconductors;Molecular Beam Epitaxy;2019-02-08

3. Investigations on the origin of ferromagnetism in Ga 1−x Cr x N and Si-doped Ga 1−x Cr x N films: Experiments and theory;Journal of Alloys and Compounds;2016-02

4. Effects of Si-doping on magnetic properties of Ga1−xCrxN;Journal of Magnetism and Magnetic Materials;2015-01

5. Magnetic Ions in Group III–V Semiconductors;Springer Series in Optical Sciences;2014-11-06

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