Excitonic transitions in strained-layerInxGa1−xAs/InP quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.39.5531/fulltext
Reference19 articles.
1. Acoustic deformation potentials and heterostructure band offsets in semiconductors
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5. Hole subbands in strained GaAs-Ga1−xAlxAs quantum wells: Exact solution of the effective-mass equation
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