Enhancement of electron and hole effective masses in back-gatedGaAs∕AlxGa1−xAsquantum wells-Reference-Cited by-同舟云学术

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Enhancement of electron and hole effective masses in back-gatedGaAs∕AlxGa1−xAsquantum wells

Published:2007-11-16 Issue:20 Volume:76 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Nomura S.,Yamaguchi M.,Akazaki T.,Tamura H.,Maruyama T.,Miyashita S.,Hirayama Y.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.76.201306/fulltext

Reference24 articles.

1. Correlation Energy and Spin Polarization in the 2D Electron Gas

2. Variable density high mobility two‐dimensional electron and hole gases in a gated GaAs/AlxGa1−xAs heterostructure

3. Two-dimensional electron gas formed in a back-gated undoped heterostructure

4. Spin Polarization andgFactor of a Dilute GaAs Two-Dimensional Electron System

5. Measurements of the Density-Dependent Many-Body Electron Mass in Two DimensionalGaAs/AlGaAsHeterostructures

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoluminescence fine structures in the fractional quantum Hall effect regime;Physical Review B;2014-03-25

2. Direct measurement of the spin gaps in a gated GaAs two-dimensional electron gas;Nanoscale Research Letters;2013-03-25

3. Exchange energy enhancedg-factors obtained from Landau fan diagrams at low magnetic fields;Physical Review B;2013-02-25

4. Measurement of photoluminescence spectral linewidth of a GaAs quantum well in perpendicular electric fields: Evidence of a crossover from trions to an electron-hole gas;Physical Review B;2013-02-25

5. Spin dependence of electron effective masses in InGaAs/InAlAs quantum well;Journal of Applied Physics;2011-09-15

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