Direct measurement of the spin gaps in a gated GaAs two-dimensional electron gas-Reference-Cited by-同舟云学术

Direct measurement of the spin gaps in a gated GaAs two-dimensional electron gas

Published:2013-03-25 Issue:1 Volume:8 Page:
ISSN:1556-276X
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Huang Tsai-Yu,Liang Chi-Te,Chen Yang Fang,Simmons Michelle Y,Kim Gil-Ho,Ritchie David A

Abstract

Abstract We have performed magnetotransport measurements on gated GaAs two-dimensional electron gases in which electrons are confined in a layer of the nanoscale. From the slopes of a pair of spin-split Landau levels (LLs) in the energy-magnetic field plane, we can perform direct measurements of the spin gap for different LLs. The measured g-factor g is greatly enhanced over its bulk value in GaAs (0.44) due to electron–electron (e-e) interactions. Our results suggest that both the spin gap and g determined from conventional activation energy studies can be very different from those obtained by direct measurements.

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

https://link.springer.com/content/pdf/10.1186/1556-276X-8-138.pdf

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