Two-dimensional electron gas formed in a back-gated undoped heterostructure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121171
Reference12 articles.
1. Variable density high mobility two‐dimensional electron and hole gases in a gated GaAs/AlxGa1−xAs heterostructure
2. High mobility GaAs heterostructure field effect transistor for nanofabrication in which dopant‐induced disorder is eliminated
3. Transport in gated undoped GaAs/AlxGa1−xAs heterostructures in the high density and high mobility range
4. Formation of two‐dimensional electron and hole gases in undoped AlxGa1−xAs/GaAs heterostructures
5. Formation of two‐dimensional electron and hole gases in undoped AlxGa1−xAs/GaAs heterostructures
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2. Effects of biased and unbiased illuminations on two-dimensional electron gases in dopant-free GaAs/AlGaAs;Physical Review B;2022-02-07
3. Properties of a Surface-Gate-Controlled Two-Dimensional Electron Gas in Undoped GaAs/AlGaAs Heterostructures;Journal of the Korean Physical Society;2020-06
4. Impact of Heterostructure Design on Transport Properties in the Second Landau Level ofIn SituBack-Gated Two-Dimensional Electron Gases;Physical Review Applied;2015-06-08
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