Alloy scattering ofn-type carriers inGaNxAs1−x
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.74.035203/fulltext
Reference43 articles.
1. Development of InGaAsN-based 1.3 m VCSELs
2. GaInNAs long-wavelength lasers: progress and challenges
3. III N V semiconductors for solar photovoltaic applications
4. Theory of electronic structure evolution in GaAsN and GaPN alloys
5. Pseudopotential theory of dilute III V nitrides
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