Ion-dose-dependent microstructure in amorphous Ge
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.12586/fulltext
Reference12 articles.
1. Comparative study of implantation‐induced damage in GaAs and Ge: Temperature and flux dependence
2. Amorphization, morphological instability and crystallization of Krypton ion irradiated germanium
3. The study of disordered systems by EXAFS: Limitations
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