Atomic-scale structure of In1-xGaxSb thin films as-deposited and after ion irradiation

Author:

Bolzan Charles A.ORCID,Johannessen Bernt,Wu Zhibin,Giulian Raquel

Funder

Conselho Nacional de Desenvolvimento Científico e Tecnológico

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior

Fundação de Amparo à Pesquisa do Estado do Rio Grande do Sul

Publisher

Elsevier BV

Reference47 articles.

1. Properties of Semiconductor Alloys : Group-IV , III – V and II – VI Semiconductors;Adachi,2009

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3. Bowing effect in elastic constants of dilute Ga(As,N) alloys;Berggren;Appl. Phys. Lett.,2016

4. Stoichiometry-dependent porosity by ion irradiation: in(1-x)Al(x)Sb films;Bolzan;J. Phys. Chem. Solid.,2021

5. Local and extended atomic structure of strained polycrystalline In(1-x)Al(x)Sb alloys;Bolzan;J. Phys. Chem. Solid.,2021

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