Molecular-dynamics simulation of cluster and atom deposition on silicon (111)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.38.8154/fulltext
Reference26 articles.
1. Ionized-cluster beam deposition and epitaxy as fabrication techniques for electron devices
2. Role of ions in ion-based film formation
3. Aluminium epitaxy on Si(111) and Si(100) using an ionized cluster beam
4. Summary Abstract: Germanium thin films deposited by the ionized‐cluster beam technique
5. Epitaxial growth of silicon: A molecular-dynamics simulation
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