Deposition of hydrogenated silicon clusters for efficient epitaxial growth-Reference-Cited by-同舟云学术

Deposition of hydrogenated silicon clusters for efficient epitaxial growth

Published:2018 Issue:23 Volume:20 Page:15626-15634
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Le Ha-Linh Thi¹²³⁴⁵,Jardali Fatme¹²³⁴⁵,Vach Holger¹²³⁴⁵^ORCID

Affiliation:

1. CNRS

2. LPICM

3. Ecole Polytechnique

4. University Paris-Saclay

5. 91128 Palaiseau

Abstract

Epitaxial silicon thin films grown from the deposition of plasma-born hydrogenated silicon nanoparticles using plasma-enhanced chemical vapor deposition have widely been investigated due to their potential applications in photovoltaic and nanoelectronic device technologies. Here, molecular dynamics simulations are presented to predict the optimal deposition conditions.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CP/C8CP00764K

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