Transmission electron microscopy characterization of low temperature boron doped silicon epitaxial films-Reference-Cited by-同舟云学术

Transmission electron microscopy characterization of low temperature boron doped silicon epitaxial films

Published:2020 Issue:33 Volume:22 Page:5464-5472
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Noircler Guillaume¹²³⁴⁵^ORCID,Chrostowski Marta¹²³⁶⁷,Larranaga Melvyn⁴⁵⁸⁹³,Drahi Etienne¹²³⁶⁷,Roca i Cabarrocas Pere⁶⁷³¹⁰¹¹^ORCID,de Coux Patricia¹²³,Warot-Fonrose Bénédicte⁴⁵⁸⁹³

Affiliation:

1. Total S.A.

2. 92400 Paris

3. France

4. CEMES-CNRS

5. Université de Toulouse

6. Institut Photovoltaïque d'Ile-de-France (IPVF)

7. 91120 Palaiseau

8. CNRS

9. 31055 Toulouse

10. LPICM-CNRS – Ecole Polytechnique

11. Institut Polytechnique de Paris

Abstract

Transmission electron microscopy techniques to better understand growth mechanisms and annealing of low temperature silicon epitaxy. HRTEM: thickness measurement, crystal morphology, and defect study. GPA (image processing): strain field analysis.

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/CE/D0CE00817F

Reference45 articles.

1. Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%

2. Silicon solar cells: toward the efficiency limits

3. Integration Processes for nPERT Si Solar Cells Using Single Side Emitter Epitaxy and front Side Laser Doping

4. A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

5. Low temperature plasma deposition of silicon thin films: From amorphous to crystalline

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