Ultrathin Ge epilayers on Si produced by low-temperature PECVD acting as virtual substrates for III-V / c-Si tandem solar cells-Reference-Cited by-同舟云学术

Ultrathin Ge epilayers on Si produced by low-temperature PECVD acting as virtual substrates for III-V / c-Si tandem solar cells

Published:2022-03 Issue: Volume:236 Page:111535
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Ghosh Monalisa^ORCID,Bulkin Pavel,Silva François,Johnson Erik V.,Florea Ileana,Funes-Hernando Daniel^ORCID,Tanguy Alexandre,Renard Charles,Vaissiere Nicolas^ORCID,Decobert Jean,García Iván^ORCID,Rey-Stolle Ignacio^ORCID,Roca i Cabarrocas Pere^ORCID

Funder

Universidad Politécnica de Madrid

European Regional Development Fund

Institute of Education Sciences

Agencia Estatal de Investigación

Agence Nationale de la Recherche

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

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