First-principles treatment of vibrational broadening in x-ray excited valence band spectra for <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>n</mml:mi><mml:mrow><mml:mtext>−</mml:mtext><mml:mi>SrTi</mml:mi></mml:mrow><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:mrow><mml:mo>(</mml:mo><mml:mn>001</mml:mn><mml:mo>)</mml:mo></mml:mrow></mml:mrow></mml:math>-Reference-Cited by-同舟云学术

First-principles treatment of vibrational broadening in x-ray excited valence band spectra for n−SrTiO3(001)

Published:2024-05-06 Issue:19 Volume:109 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Chambers Scott A.¹,Biswas Deepnarayan²,Lee Tien-Lin²,van Schilfgaarde Mark³,Sushko Peter V.¹^ORCID

Affiliation:

1. Physical Sciences Division, Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, USA

2. Diamond Light Source, Ltd., Harwell Science and Innovation Campus, Didcot, Oxfordshire OX11 0DE, England, United Kingdom

3. Materials Science Division, National Renewable Energy Laboratory, Golden, Colorado 80401, USA

Funder

U.S. Department of Energy

National Energy Research Scientific Computing Center

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.109.195115/fulltext

Reference57 articles.

1. Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface Potentials

2. Interface chemistry and electrical properties of tungsten Schottky‐barrier contacts to GaAs

3. Semiconductor core-level to valence-band maximum binding-energy differences: Precise determination by x-ray photoelectron spectroscopy

4. Variation of n-GaAs (100) interface Fermi level by Ge and Si overlayers

5. The role of ultrathin AlAs interlayers in determining the interface Fermi energy of the epitaxial NiAl/AlAs/n-GaAs(001) system

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1. X-ray photoelectron spectroscopy of epitaxial films and heterostructures;Surface Science Reports;2024-08