The role of ultrathin AlAs interlayers in determining the interface Fermi energy of the epitaxial NiAl/AlAs/n-GaAs(001) system-Reference-Cited by-同舟云学术

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The role of ultrathin AlAs interlayers in determining the interface Fermi energy of the epitaxial NiAl/AlAs/n-GaAs(001) system

Published:1990-07 Issue:4 Volume:8 Page:985
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Chambers S. A.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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4. Introductory guide to the application of XPS to epitaxial films and heterostructures;Journal of Vacuum Science & Technology A;2020-12

5. Schottky enhancement of contacts to n-GaAs via the exchange mechanism using NiAl[sub x]Ga[sub 1−x] as a metallization;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999

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