Electron-phonon coupling in n -type Ge two-dimensional systems-Reference-Cited by-同舟云学术

Electron-phonon coupling in n -type Ge two-dimensional systems

Published:2020-11-16 Issue:20 Volume:102 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Ciano C.,Persichetti L.^ORCID,Montanari M.^ORCID,Di Gaspare L.^ORCID,Capellini G.,Baldassarre L.,Ortolani M.,Pashkin A.,Helm M.,Winnerl S.,Virgilio M.,De Seta M.

Funder

Horizon 2020

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.102.205302/fulltext

Reference35 articles.

1. Interface roughness scattering in GaAs/AlAs quantum wells

2. Influence of electron temperature and carrier concentration on electron–LO-phonon intersubband scattering in wide GaAs/AlxGa1−xAs quantum wells

3. Microscopic calculation of the electron-phonon interaction in quantum wells

4. Interfacial sharpness and intermixing in a Ge-SiGe multiple quantum well structure

5. Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering

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