Influence of electron temperature and carrier concentration on electron–LO-phonon intersubband scattering in wide GaAs/AlxGa1−xAs quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.52.1874/fulltext
Reference13 articles.
1. Time-resolved Raman scattering in GaAs quantum wells
2. Far-infrared saturation spectroscopy of a single square well
3. Intersubband carrier relaxation in highly excited GaAs/Ga1−xAlxAs multiple quantum wells
4. Excite-probe determination of the intersubband lifetime in wide GaAs/AlGaAs quantum wells using a far-infrared free-electron laser
5. Intersubband relaxation in GaAs-AlxGa1−xAs quantum well structures observed directly by an infrared bleaching technique
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