Excitation intensity dependence of photoluminescence from narrow 〈100〉- and 〈111〉A-grownInxGa1−xAs/GaAssingle quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.59.5049/fulltext
Reference49 articles.
1. High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: Effect of substrate misorientation
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3. Critical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structures
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