Resolving exciton diffusion in InGaAs quantum wells using micro-photoluminescence mapping with a lateral excitation-Reference-Cited by-同舟云学术

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Resolving exciton diffusion in InGaAs quantum wells using micro-photoluminescence mapping with a lateral excitation

Published:2013-10-24 Issue:12 Volume:28 Page:125004
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Cao Shuo,Ji Xiaofan,Qiu Kangsheng,Gao Yunan,Zhao Yanhui,Tang Jing,Xu Zheng,Jin Kuijuan,Xu Xiulai

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/28/i=12/a=125004/pdf

Reference32 articles.

1. Evidence for Bose-Einstein Statistics in an Exciton Gas

2. Phase Diagram of Degenerate Exciton Systems

3. Transition to a Bose–Einstein condensate and relaxation explosion of excitons at sub-Kelvin temperatures

4. Bose-Einstein statistics in thermalization and photoluminescence of quantum-well excitons

5. Coherence Length of Cold Exciton Gases in Coupled Quantum Wells

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1. Photoluminescence study of exciton localization in InGaAs bulk and InGaAs/InAlAs wide quantum well on InP (001) substrate;Journal of Luminescence;2022-06

2. Enhanced photoluminescence of InGaAs/AlGaAs quantum well with tungsten disulfide quantum dots;Nanotechnology;2020-03-13

3. Photonic trimming of quantum emitters via direct fabrication of metallic nanofeatures;APL Photonics;2018-07

4. Persistent Photomagnetism in Superparamagnetic Iron Oxide Nanoparticles;Advanced Electronic Materials;2018-05-16

5. Magneto optical properties of self-assembled InAs quantum dots for quantum information processing;Chinese Physics B;2018-02

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