Possibility of a Mott-Hubbard ground state for the SiC(0001) surface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.R4230/fulltext
Reference23 articles.
1. Surface structure and composition of β- and 6H-SiC
2. Morphology, Atomic and Electronic Structure of 6H-SiC(0001) Surfaces
3. STM study of the SiC(0001) √3 × √3 surface
4. Theory of the adatom-induced reconstruction of the SiC(0001)√3×√3 surface
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2. The properties of isolated dangling bonds on hydrogenated 2H-SiC surfaces;Surface Science;2017-02
3. Electronic charge transfer contribution in adsorption of silicon at the SiC(0001) surface—A density functional theory (DFT) study;Applied Surface Science;2017-01
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5. Nature of the Insulating Ground State of the Two-Dimensional Sn Atom Lattice on SiC(0001);Scientific Reports;2016-07-28
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