Electronic structure of BAs and boride III-V alloys
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.62.13522/fulltext
Reference65 articles.
1. A calibration of the localized vibrational mode absorption line due to isovalent boron impurities in gallium arsenide
2. Defect centres involving boron impurities in irradiated and annealed high-resistivity gallium arsenide
3. Boron impurity anti-site defects in p-type gallium-rich gallium arsenide
4. Direct evidence for the existence of BAsimpurity antisite centres in GaAs
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