Step bunching of vicinal6H-SiC{0001}surfaces
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.79.245413/fulltext
Reference43 articles.
1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
2. Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties
3. Microstructural evolution and defect formation during the initial stages of the growth of silicon carbide and aluminum nitride on α(6H)-SiC(0001) substrates
4. Impact of surface step heights of 6H–SiC (0001) vicinal substrates in heteroepitaxial growth of 2H–AlN
5. The growth and morphology of epitaxial multilayer graphene
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