Microstructural evolution and defect formation during the initial stages of the growth of silicon carbide and aluminum nitride on α(6H)-SiC(0001) substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference26 articles.
1. The Preference of Silicon Carbide for Growth in the Metastable Cubic Form
2. Surface structure and composition of β- and 6H-SiC
3. Epitaxial growth of GaN/AlN heterostructures
4. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
5. GaN grown on hydrogen plasma cleaned 6H‐SiC substrates
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1. Step bunching of vicinal6H-SiC{0001}surfaces;Physical Review B;2009-06-10
2. Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties;Physics Reports;2003-05
3. Topological analysis of defects in epitaxial nitride films and interfaces;PHYS STATUS SOLIDI B;2001
4. Topological Analysis of Defects in Epitaxial Nitride Films and Interfaces;physica status solidi (b);2001-09
5. Growth Mode and Defects in Aluminum Nitride Sublimed on (0001) 6H-SiC Substrates;MRS Internet Journal of Nitride Semiconductor Research;2001
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