Excitonic effects on electron spin orientation and relaxation in wurtzite GaN
Author:
Funder
National Basic Research Program of China
National Natural Science Foundation of China
K. C. Wong Education Foundation
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.104.125202/fulltext
Reference32 articles.
1. Current and Strain-Induced Spin Polarization inInGaN/GaNSuperlattices
2. Circular photogalvanic effect of the two-dimensional electron gas in AlxGa1−xN∕GaN heterostructures under uniaxial strain
3. Zero-field spin splitting in AlxGa1−xN/GaN heterostructures with various Al compositions
4. Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain
5. Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires
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1. Spin injection, relaxation, and manipulation of carriers in GaN-based semiconductors;SCIENTIA SINICA Physica, Mechanica & Astronomica;2023-09-06
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3. Spin injection, relaxation, and manipulation in GaN-based semiconductors;Advances in Physics: X;2023-01-12
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