Author:
Sun Zhenhao,Tang Ning,Chen Shuaiyu,Zhang Fan,Fan Haoran,Zhang Shixiong,Wang Rongxin,Lin Xi,Liu Jianping,Ge Weikun,Shen Bo
Abstract
Abstract
Spin injection and detection in bulk GaN were investigated by performing magnetotransport measurements at low temperatures. A non-local four-terminal lateral spin valve device was fabricated with Co/GaN Schottky contacts. The spin injection efficiency of 21% was achieved at 1.7 K. It was confirmed that the thin Schottky barrier formed between the heavily n-doped GaN and Co was conducive to the direct spin tunneling, by reducing the spin scattering relaxation through the interface states.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials