Electron scattering by spatially correlatedDXcharges
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.2166/fulltext
Reference18 articles.
1. Deep donor levels (DXcenters) in III‐V semiconductors
2. Pressure dependence ofDXcenter mobility in highly doped GaAs
3. Investigation of theDXcenter in heavily dopedn-GaAs
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1. Photo-induced electron trapping in indirect bandgap at low temperature;Journal of Physics: Condensed Matter;1999-01-01
2. Investigation of temperature influence on photo-induced conductivity in n-type AlxGa1−xAs;Radiation Effects and Defects in Solids;1998-10
3. Chapter 5.3 Spatial Correlations of Impurity Charges in Doped Semiconductors;Semiconductors and Semimetals;1998
4. Investigation of deep metastable traps in Si δ-doped GaAs/Al0.33Ga0.67As quantum-well samples using noise spectroscopy;Physical Review B;1996-07-15
5. Light-induced relaxing dipoles inn-typeAlxGa1−xAs;Physical Review B;1995-05-15
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