Correlation between overgrowth morphology and optical properties of single self-assembled InP quantum dots-Reference-Cited by-同舟云学术

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Correlation between overgrowth morphology and optical properties of single self-assembled InP quantum dots

Published:2003-09-04 Issue:12 Volume:68 Page:
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Johansson M. K.-J.,Håkanson U.,Holm M.,Persson J.,Sass T.,Johansson J.,Pryor C.,Montelius L.,Seifert W.,Samuelson L.,Pistol M.-E.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.68.125303/fulltext

Reference29 articles.

1. Room-temperature lasing via ground state of current-injected vertically aligned InP/GaInP quantum dots

2. Double heterostructure lasers: early days and future perspectives

3. Influence of InxGa1-xAs (0≤x≤0.3) Cap Layer on Structural and Optical Properties of Self-assembled InAs/GaAs Quantum Dots

4. Structural and optical properties of self-assembled InAs/GaAs quantum dots covered by InxGa1−xAs (0⩽x⩽0.3)

5. Surface morphology evolution during the overgrowth of large InAs–GaAs quantum dots

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1. Bibliography;Swift Ion Beam Analysis in Nanosciences;2017-08-25

2. Inter-dot strain field effect on the optoelectronic properties of realistic InP lateral quantum-dot molecules;Journal of Applied Physics;2015-03-07

3. Time-resolved and temperature-dependent photoluminescence studies on CdTe/ZnTe quantum dots with different ZnTe capping layer thicknesses;Thin Solid Films;2013-11

4. THE EFFECT OF In0.1Ga0.9As UNDERLYING LAYER ON THE STRUCTURAL PROPERTIES OF SELF-ASSEMBLED In0.5Ga0.5As QUANTUM DOTS;Nano;2011-04

5. The effects of the ZnTe capping layer thickness on the optical and electronic properties in CdTe∕ZnTe quantum dots;Applied Physics Letters;2008-02-04

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